Aurora Integrated Plasma Equipment 整合式電漿電源供應器 IPE 300

Application Range In Plasma Systems

PVD                    物理氣相沉積
HDP-CVD                高密度化學氣相沉積
Capacitively coupled plasma (CCP) 電容耦合電漿 and Inductively Coupled Plasma ( ICP)感應耦合電漿系統. 
Reactive Ion Etching (RIE) 電漿蝕刻
PECVD (Plasma Enhanced Chemical Vapor Deposition) 電漿輔助化學沉積
 Plasma Clean System       電漿清潔系統
 Atmospheric Plasma System 常壓大氣電漿系統
 Biomedical-Biochip        生物醫學-生物晶片
 Nano-materials            奈米材料

Aurora IPE 300 Integrated Plasma Equipment

$25,000.00

Model: Aurora IPE 300

System Specification
Input: AC90V-240V,50-60HZ,6A
RF Output Power: MAX 200W (Optional 300W)
Conforms to FCC and CE.
Frequency:13.56MHZ +/- 50PPM
Power Range Adjustment: continuous 1 W to 200 W
Output Impedance:3ohm to 50ohm
PID Temperature Control: Source Constant heating
Real Time Automatching (up to 1,000 W)(1.5 KW Optional)
DC Pulse Trigger
Air Cooling
Dimension (WxDxH): 482 X 560 X 202 mm
Weight: about 80 lbs.氣體輸出入控制模組
 Main Gas Flow Range: 0-30 SLM
 Reactive Gas Flow Range: 0-5 SLM
 Connector: 6 mm or 1/4 inch Speed connector

Force State RF Generator is Capable of Driving various ICP, CCP, Sputtering, PECVD Vacuum Chamber, and Atmospheric Plasma.

Direct Shop

State-of-the-Art Technology

RF Power Supply, Oxygen Plasma/Selected Gas Plasma System

Aurora IPE 300 Integrated Plasma Equipment

Details